A novel analytical model for the breakdown voltage of thin-film SOI power MOSFETs

被引：20
作者：
Yang, WW
Cheng, XH
Yu, YH
Song, ZR
Shen, DS
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China
[2] Univ Alabama, Dept Elect & Comp Engn, Huntsville, AL 35899 USA
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 01期
基金：
美国国家科学基金会;
关键词：
SOI; RESURF; breakdown voltage; analytical model;
D O I：
10.1016/j.sse.2004.07.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel analytical model for the surface field distribution and breakdown voltage of thin-film silicon on insulator (Sol) power MOSFETs has been proposed. The analytical solutions for the surface potential and field distribution are derived on the basis of the two-dimensional Poisson equation. From these expressions, the dependence of breakdown voltage on the device parameters is carefully examined. The validity of this model is demonstrated by comparison with numerical simulations and experimental data. Compared with other analytical models, this approach is more suitable to explain the breakdown behavior. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：43 / 48
页数：6
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