Critical thickness in the HgCdTe/CdZnTe system

被引：32
作者：
Berding, MA
Nix, WD
Rhiger, DR
Sen, S
Sher, A
机构：
[1] SRI Int, Menlo Park, CA 94025 USA
[2] Stanford Univ, Stanford, CA 94305 USA
[3] Raytheon IRCOE, Goleta, CA USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 06期
关键词：
HgCdTe; dislocations; critical thickness; cross-hatch;
D O I：
10.1007/s11664-000-0204-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an analysis of the critical thickness of Hg1-xCdxTe on Cd1-yZnyTe substrates as a function of x and y and show that a very tight control of the substrate composition is needed to produce dislocation-free epi-layers. Hg1-xCdxTe layers on relaxed underlayers of different compositions of Hg are also examined.
引用
收藏
页码：676 / 679
页数：4
相关论文
共 9 条
[1]   Lithium, sodium, and copper in Hg0.78Cd0.22Te and CdTe-based substrates [J].
Berding, MA ;
Sher, A ;
Van Schilfgaarde, M .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :573-578
[2]  
Capper P., 1994, EMIS DATAREVIEWS SER, V10, P41
[3]   SEMICONDUCTOR ALLOY THEORY - INTERNAL STRAIN-ENERGY AND BULK MODULUS [J].
CHEN, AB ;
SHER, A ;
BERDING, MA .
PHYSICAL REVIEW B, 1988, 37 (11) :6285-6289
[4]   THE STABILITY OF A DISLOCATION THREADING A STRAINED LAYER ON A SUBSTRATE [J].
FREUND, LB .
JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 1987, 54 (03) :553-557
[5]  
MADELUNG O, 1990, LANDOLTBORNSTEIN NUM, V22
[6]  
MADELUNG O, 1990, LANDOLTBORNSTEIN N A, V29
[7]   Investigation of the cross-hatch pattern and localized defects in epitaxial HgCdTe [J].
Rhiger, DR ;
Peterson, JM ;
Emerson, RM ;
Gordon, EE ;
Sen, S ;
Chen, Y ;
Dudley, M .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) :615-623
[8]  
SEN S, 1990, MATER RES SOC SYMP P, V161, P3
[9]   THE RELATIONSHIP BETWEEN LATTICE MATCHING AND CROSSHATCH IN LIQUID-PHASE EPITAXY HGCDTE ON CDZNTE SUBSTRATES [J].
TOBIN, SP ;
SMITH, FTJ ;
NORTON, PW ;
WU, J ;
DUDLEY, M ;
DIMARZIO, D ;
CASAGRANDE, LG .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (09) :1189-1199
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