Optical effects of annealing on Yb-doped Y2SiO5 thin films

被引：11
|
作者：
Denoyer, A. [1 ]
Jandl, S.
Thibault, F.
Pelenc, D.
机构：
[1] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada
[2] CEA Grenoble, LETI DOPT STCO, F-38054 Grenoble 09, France
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 15期
关键词：
D O I：
10.1088/0953-8984/19/15/156222
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper we investigate the optical effects of annealing under an oxygen atmosphere of Yb-doped Y2SiO5 thin films grown by liquid phase epitaxy. Infrared transmission, particularly adapted to thin film characterizations by means of Yb3+ crystal field excitations, is used to single out the effects of annealing. For instance, absorption intensities increase by similar to 10% and disorder in Yb3+ substitution is reduced. Micro-Raman backscattering measurements detect no particular defects in as-grown and annealed thin films.
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页数：8
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