Hafnia: Energetics of thin films and nanoparticles

被引:38
作者
Zhou, Wei [1 ,2 ]
Ushakov, Sergey V. [1 ,2 ]
Wang, Tuo [3 ]
Ekerdt, John G. [3 ]
Demkov, Alexander A. [4 ]
Navrotsky, Alexandra [1 ,2 ]
机构
[1] Univ Calif Davis, Peter A Rock Thermochem Lab, Davis, CA 95616 USA
[2] Univ Calif Davis, NEAT ORU, Davis, CA 95616 USA
[3] Univ Texas Austin, Dept Chem Engn, Austin, TX 78712 USA
[4] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA
基金
美国国家科学基金会;
关键词
SURFACE ENTHALPY; PHASE-STABILITY; ZIRCONIA; CRYSTALLIZATION; 1ST-PRINCIPLES; TEMPERATURE; CALORIMETRY; DEPOSITION; ADSORPTION; SUBSTRATE;
D O I
10.1063/1.3435317
中图分类号
O59 [应用物理学];
学科分类号
摘要
Crystallization energetics of amorphous hafnia powders and thin films on platinum substrates was studied by differential scanning calorimetry and time-resolved high temperature x-ray diffraction. For initially amorphous 25 and 20 nm films from atomic layer deposition, crystallization enthalpy decreases from -38 to -32 kJ/mol, and crystallization temperature increases from 388 to 417 degrees C as thickness decreases. Enthalpy of water vapor adsorption on the surface of monoclinic hafnia was measured for both bulk powder and nanoparticles and was found to vary from -110 to -130 kJ/mol for coverage of similar to 5 H2O/nm(2). The enthalpies of monoclinic hafnia with various surface areas, prepared by crystallization and annealing of an amorphous hafnia precursor, were measured by high temperature oxide melt solution calorimetry. Under the previously used assumption that the interfacial enthalpy is 20% of the surface enthalpy, the surface enthalpy was calculated from experimental data as 2.8 +/- 0.1 J/m(2) for the hydrated surface and 3.7 +/- 0.1 J/m(2) for the anhydrous hafnia surface. These values are similar to those measured previously for monoclinic zirconia. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3435317]
引用
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页数:7
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