High-power mid-IR type II interband cascade lasers

被引：1
作者：
Bruno, JD [1 ]
Yang, RQ [1 ]
Bradshaw, JL [1 ]
Pham, JT [1 ]
Wortman, DE [1 ]
机构：
[1] USA, Res Lab, Adelphi, MD 20783 USA
来源：
ENABLING PHOTONIC TECHNOLOGIES FOR AEROSPACE APPLICATIONS II | 2000年 / 4042卷
关键词：
D O I：
10.1117/12.391912
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Type-II interband cascade (IC) lasers take advantage of the broken-gap alignment in type-II quantum wells to reuse electrons for sequential photon emissions from serially connected active regions. Here, we describe recent advances in InAs/GaInSb type-II IC lasers at emission wavelengths of 3.6-4 mu m; these semiconductor lasers have exhibited significantly higher differential quantum efficiencies and peak powers than previously reported. Low threshold current densities (e.g., similar to 56 A/cm(2) at 80 K) and power efficiency exceeding 9% were observed from a mesa-stripe laser in cw operation. Also, these lasers were able to operate at temperatures up to 250 K in pulsed mode and 127 K in cw mode. We observed from several devices at temperatures above 80 K, slope efficiencies exceeding 1 W/A/facet, corresponding to a differential external quantum efficiency exceeding 600%. A peak optical output power of similar to 6 W/facet was observed from a type-II IC laser at 80 K.
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页码：24 / 32
页数：9
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