Synthesis of crystalline Si quantum dots by millisecond laser irradiation of SiOxNy layers

被引：8

作者：

Mannino, Giovanni ^{[1
]}

Spinella, Corrado ^{[1
]}

Bongiorno, Corrado ^{[1
]}

Nicotra, Giuseppe ^{[1
]}

Mercorillo, Flora ^{[1
]}

Privitera, Vittorio ^{[1
]}

Franzo, Giorgia ^{[2
]}

Piro, Alberto Maria ^{[2
]}

Grimaldi, MariaGrazia ^{[2
]}

Di Stefano, Maria Ausilia ^{[3
]}

Di Marco, Silvestra ^{[3
]}

机构：

[1] IMM, CNR, I-95121 Catania, Italy

[2] MATIS, INFM, CNR, I-95124 Catania, Italy

[3] STMicroelectronics, I-95121 Catania, Italy

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

diffusion; elemental semiconductors; impurities; laser beam annealing; laser beam effects; photoluminescence; semiconductor quantum dots; silicon; silicon compounds; ELECTRON-ENERGY-LOSS; SILICON NANOCRYSTALS; OXYNITRIDE FILMS; PHOTOLUMINESCENCE;

D O I：

10.1063/1.3282660

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrated that the timescale for Si quantum dot (Si-QD) formation in a SiOxNy layer is a few milliseconds by IR laser irradiation. The amount of Si agglomerated into QD in a laser irradiated SiOxNy layer is comparable to that calculated after furnace annealing at 1250 degrees C for 30 min. However, we found that crystalline Si-QD can be formed by laser only if the amount of Si atoms in excess is as high as 1x10(22)/cm(3). The Si-QD contains impurities like N and O that prevent luminescence at 900 nm. The photoluminescence (PL) signal is recorded only after an additional annealing after laser irradiation at temperatures above 1000 degrees C when diffusion-assisted replacement of N and O occurs.

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页数：5

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