Poly-Si films with low aluminum dopant containing by aluminum-induced crystallization

被引：10
作者：
Wang ChengLong [1 ,2 ]
Fan DuoWang [1 ,2 ]
Wang ChengBin [2 ]
Geng ZhongRong [2 ]
Ma HaiLin [2 ]
Miao ShuFan [1 ]
机构：
[1] Lanzhou Jiaotong Univ, Natl Engn Res Ctr Technol & Equipment Green Coati, Lanzhou 730070, Peoples R China
[2] Lanzhou Jiaotong Univ, MOE, Key Lab Optoelect Technol & Intelligence Control, Lanzhou 730070, Peoples R China
来源：
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY | 2010年 / 53卷 / 01期
关键词：
polycrystalline silicon; low doping concentration; AIC; crystallization; SILICON THIN-FILMS; POLYCRYSTALLINE SILICON; AMORPHOUS-SILICON; GROWTH-PROCESS; SOLAR-CELLS; GLASS;
D O I：
10.1007/s11433-010-0084-3
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Typically, highly p-doped (2x10(18) cm(-3)) poly-Si films fabricated by the aluminum induced layer exchange (ALILE) process are not suitable for solar cell absorber layers. In this paper, the fabrication of high-quality, continuous polycrystalline silicon (poly-Si) films with lower doping concentrations (2x10(16) cm(-3)) using aluminum-induced crystallization (AIC) is reported. Secondary-ion-mass spectroscopy (SIMS) results showed that annealing at different temperature profiles leads to a variety of Al concentrations. Hall Effect measurements revealed that Al dopant concentration depends on the annealing temperature and temperature profile. Raman spectral analysis indicated that samples prepared via AIC contain some regions with small grains.
引用
收藏
页码：111 / 115
页数：5
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