Development of Monte Carlo modeling for proton induced charge in Si pin photodiode

被引：2
作者：
Onoda, S
Hirao, T
Laird, JS
Wakasa, T
Yamakawa, T
Okamoto, T
Koizumi, Y
Kamiya, T
机构：
[1] Tokai Univ, Hiratsuka, Kanagawa 2591292, Japan
[2] Japan Atom Energy Res Inst, Gunma 3701292, Japan
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 05期
关键词：
D O I：
10.1109/TNS.2004.835110
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-energy protons induce Single Event Transient (SET) currents that trigger bit errors in optical data links used in radiation environments. Here, Monte Carlo modeling and the Evaluated Nuclear Data Format (ENDF) database library were combined to develop an approach for estimating proton induced SET currents in photodiodes. Modeling of the SET current distribution induced in a Si pin photodiode is compared to charge collection data measured in the laboratory. In this paper, we discuss the basic methodology of the approach and comment on any differences noted between theory and experiment.
引用
收藏
页码：2770 / 2775
页数：6
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