A high-speed silicon photoconductive switch

被引：0

作者：

Wu, TX ^{[1
]}

Shang, BH ^{[1
]}

Vorst, AV ^{[1
]}

机构：

[1] ZHEJIANG UNIV, DEPT ELECTR ENGN, HANGZHOU 310027, PEOPLES R CHINA

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1996年 / 11卷 / 04期

关键词：

photoconductive switch; high-speed switch;

D O I：

10.1002/(SICI)1098-2760(199603)11:43.0.CO;2-H

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present in this article a high-speed silicon photoconductive switch by which electric pulses of amplitude higher than 1000 V and pulse widths of less than 30 ns have been obtained at a 50-Omega load under 1500-V dc biasing. During the preparation of the switches two novel techniques were introduced. These reduce the carriers' lifetimes considerably and keep the leakage current at a very low low level under high de biasing. (C) 1996 John Wiley & Sons, Inc.

引用

页码：177 / 179

页数：3

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