Flexible Graphene Field-Effect Transistors for Microwave Electronics

被引:0
作者
Meric, Inanc [1 ]
Petrone, Nicholas [2 ]
Hone, James [2 ]
Shepard, Kenneth L. [1 ]
机构
[1] Columbia Univ, Dept Elect Engn, New York, NY 10027 USA
[2] Columbia Univ, Dept Mech Engn, New York, NY 10027 USA
来源
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词
graphene; high-frequency; flexible electronics;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The high-frequency characteristics of graphene field-effect transistors (GFETs) has received significant interest due the very high carrier velocities in graphene. In addition to excellent electronic performance, graphene possesses exceptional mechanical properties such as high flexibility and strength. Here, we demonstrate the potential of flexible-GFETs and show that the combination of electrical and mechanical advantages of graphene result in gigahertz-frequency operation at strain values up to 2%. These devices represent the only reported technology to achieve gigahertz-frequency power gain at strain levels above 0.5%.
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页数:3
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