Separating inverse spin Hall voltage and spin rectification voltage by inverting spin injection direction

被引:26
作者
Zhang, Wenxu [1 ]
Peng, Bin [1 ]
Han, Fangbin [1 ]
Wang, Qiuru [1 ]
Soh, Wee Tee [2 ]
Ong, Chong Kim [2 ]
Zhang, Wanli [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
[2] Natl Univ Singapore, Dept Phys, Ctr Superconducting & Magnet Mat, 2 Sci Dr 3, Singapore 117551, Singapore
关键词
MAGNETORESISTANCE;
D O I
10.1063/1.4943517
中图分类号
O59 [应用物理学];
学科分类号
摘要
We develop a method for universally resolving the important issue of separating the inverse spin Hall effect (ISHE) from the spin rectification effect (SRE) signal. This method is based on the consideration that the two effects depend on the spin injection direction: The ISHE is an odd function of the spin injection direction while the SRE is independent on it. Thus, the inversion of the spin injection direction changes the ISHE voltage signal, while the SRE voltage remains. It applies generally to analyzing the different voltage contributions without fitting them to special line shapes. This fast and simple method can be used in a wide frequency range and has the flexibility of sample preparation. (C) 2016 Author(s).
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页数:4
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