Relevance Of TCO Workfunction In n-Silicon Oxide Emitter - c-Si (p) Heterojunction Solar Cell

被引：0

作者：

Izzi, M. ^{[1
]}

Serenelli, L. ^{[1
]}

Mangiapane, P. ^{[1
]}

Salza, E. ^{[1
]}

Tucci, M. ^{[1
]}

Della Noce, M. ^{[2
]}

Usatii, I. ^{[2
]}

Bobeico, E. ^{[2
]}

Mercaldo, L. V. ^{[2
]}

Lancellotti, L. ^{[2
]}

Veneri, P. Delli ^{[2
]}

Caputo, D. ^{[3
]}

de Cesare, G. ^{[3
]}

机构：

[1] ENEA, Casaccia Res Ctr Rome, Rome, Italy

[2] ENEA, Port Res Ctr Port Na, Portici, Na, Italy

[3] Univ Roma La Sapienza, DIET, I-00185 Rome, Italy

来源：

2015 IEEE 42ND PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2015年

关键词：

microcrystalline silicon oxide; heterojunction; LAYER;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The amorphous/crystalline silicon heterojunction solar cells have largely demonstrated their usefulness to reach high efficiency. We have adopted a different and wider bandgap emitter based on silicon oxide, n-SiOx. A central role in this type of structure is played from the TCO workfunction whose value affects strongly the heterojunction's band structure at the emitter interface. RF magnetron sputtered TCO obtained with different deposition parameters, have been made in order to optimize their use in our heterojunction solar cell. Numerical simulation on the SiOx HJ, with TCO having proper workfunction value, show potential efficiency conversion well over the 23%. New Roman Bold font. An example is shown next.

引用

页数：4

共 10 条

[1] Doped SiOx emitter layer in amorphous/crystalline silicon heterojunction solar cell [J].