Texture and stress analysis of 120 nm copper interconnects

被引：13

作者：

Ganesh, K. J. ^{[1
]}

Rajasekhara, S. ^{[1
]}

Zhou, J. P. ^{[1
]}

Ferreira, P. J. ^{[1
]}

机构：

[1] Univ Texas Austin, Mat Sci & Engn Program, Austin, TX 78712 USA

来源：

SCRIPTA MATERIALIA | 2010年 / 62卷 / 11期

关键词：

Copper interconnects; Scanning transmission electron microscopy diffraction; Finite element method stress analysis; VOID FORMATION; CU; LINEWIDTH;

D O I：

10.1016/j.scriptamat.2010.02.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A scanning transmission electron microscope diffraction technique was used to determine the local orientation of copper grains in 120 nm copper interconnect (CI) lines. These grains exhibit a <1 1 0> normal orientation while the <<(1)over bar> 1 2> and the <1 <(1)over bar> 1> type orientations are present along the length and width of the CI line, respectively. Stresses, as high as 625 MPa, are present at the copper/diffusion barrier triple junctions that in conjunction with large stress gradients may induce stress-induced void formation upon thermal cycling. (C) 2010 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

引用

页码：843 / 846

页数：4

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