Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

被引：9

作者：

Choe, Yun-Seo ^{[1
,2
]}

Yi, Mi Hye ^{[1
]}

Kim, Ji-Heung ^{[2
]}

Kim, Yun Ho ^{[1
]}

Jang, Kwang-Suk ^{[3
]}

机构：

[1] Korea Res Inst Chem Technol, Div Adv Mat, Daejeon 34114, South Korea

[2] Sungkyunkwan Univ, Sch Chem Engn, Suwon 16419, South Korea

[3] Hankyong Natl Univ, Dept Chem Engn, Anseong 17579, South Korea

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2016年 / 18卷 / 12期

关键词：

FIELD-EFFECT TRANSISTORS; ORGANIC-TRANSISTOR; HIGH-MOBILITY; STRUCTURAL ORDER; PERFORMANCE; STABILITY; COPOLYMER; PRESSURE; SENSORS;

D O I：

10.1039/c5cp06320e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This study investigates a spin-coating method for modifying the surface properties of a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator. The 60 nm-thick PEMA thin film exhibits excellent electrical insulating properties, and its surface properties could be easily modified by surface grafting of octylamine. Due to surface treatment via spin-coating, the surface energy of the PEMA gate insulator decreased, the crystal quality of the organic semiconductor improved, and consequently the performance of low-voltage organic thin-film transistors (TFTs) was enhanced. Our results suggest that the surface treatment of the PEMA gate insulator could be a simple and effective method for enhancing the performance of organic TFTs.

引用

页码：8522 / 8528

页数：7

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