Structure-dependent behavior of stress-induced voiding in Cu interconnects

被引：7

作者：

Wu, Zhen-Yu ^{[1
]}

Yang, Yin-Tang ^{[1
]}

Chai, Chang-Chun ^{[1
]}

Li, Yue-Jin ^{[1
]}

Wang, Jia-You ^{[1
]}

Li, Bin ^{[1
]}

Liu, Jing ^{[1
]}

机构：

[1] Xidian Univ, Key Lab, Minist Educ Band Gap Semicond Mat & Devices, Sch Microelect, Xian 710071, Peoples R China

来源：

THIN SOLID FILMS | 2010年 / 518卷 / 14期

基金：

中国国家自然科学基金;

关键词：

Stress-induced voiding; Interconnect; Reliability; DUAL DAMASCENE INTERCONNECTS; ELECTROMIGRATION; MIGRATION; METALLIZATION; TEMPERATURE; IMPROVEMENT; LIFETIME;

D O I：

10.1016/j.tsf.2009.12.093

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stress modeling and cross-section failure analysis by focused-ion-beam have been used to investigate stress-induced voiding phenomena in Cu interconnects. The voiding mechanism and the effect of the interconnect structure on the stress migration have been studied. The results show that the most concentrated tensile stress appears and voids form at corners of vias on top surfaces of Cu M1 lines. A simple model of stress induced voiding in which vacancies arise due to the increase of the chemical potential under tensile stress and diffuse under the force of stress gradient along the main diffusing path indicates that stress gradient rather than stress itself determines the voiding rate. Cu interconnects with larger vias show less resistance to stress-induced voiding due to larger stress gradient at corners of vias. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3778 / 3781

页数：4

共 20 条

[1] Temperature characteristics of stress-induced migration based on atom migration [J].