Analyses of images of neutron interactions and single particle displacement damage in CCD Arrays

被引:21
作者
Chugg, AA [1 ]
Jones, R
Moutrie, MJ
Truscott, PR
机构
[1] MBDA UK Ltd, Radiat Effects Grp, Bristol BS34 7QW, Avon, England
[2] QinetiQ, Dept Space, Farnborough GU14 0LX, Hants, England
关键词
annealing; APS; CCD; charge collection efficiency; dark current spike; GEANT4; neutron interactions; particle tracks; random telegraph signal (RTS); single particle displacement damage effects (SPI)DE); transient events;
D O I
10.1109/TNS.2004.839164
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The purpose of this work is to understand the interaction of high energy neutrons with CCDs with the aim of deploying them in flight experiments to gather a database of atmospheric neutron interaction events in silicon cells. The new results in this paper include 1) early-time multilevel RTS signals from dark current spikes, which have never been resolved before and 2) improved resolution of the frequency distributions of event intensity and comparison with results from a radiation transport code. This work adds to the state-of-the-art by providing a novel perspective on the formation and evolution (annealing) of displacement damage complexes in silicon and by demonstrating that CCDs can provide an attractive combination of spatial and intensity resolution for the interaction events of neutrons and other particles within silicon cells.
引用
收藏
页码:3579 / 3584
页数:6
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