Thermal stress induced dislocation distribution in directional solidification of Si for PV application

被引：33

作者：

Jiptner, Karolin ^{[1
]}

Gao, Bing ^{[2
]}

Harada, Hirofumi ^{[1
]}

Miyamura, Yoshiji ^{[1
]}

Fukuzawa, Masayuki ^{[3
]}

Kakimoto, Koichi ^{[2
]}

Sekiguchi, Takashi ^{[1
]}

机构：

[1] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[2] Kyushu Univ, Fukuoka 8168580, Japan

[3] Kyoto Inst Technol, Matsugasaki, Kyoto 6068585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 408卷

关键词：

directional solidification; thermal stress; dislocations; residual strain; semiconducting silicon; SINGLE-CRYSTAL SILICON; GROWTH; INGOT;

D O I：

10.1016/j.jcrysgro.2014.09.017

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

This paper presents the limitation of the cast technique for silicon growth and the obstacle to reduce the dislocation density below 10(3) cm(-2). The thermal stress induced dislocation density, independent of other dislocation sources, is determined and the result suggests that local dislocation densities as high as 10(4) cm(-2) are readily introduced alone in the cooling period of the crystal growth. Areas of high residual strain and dislocation densities are identified and presented. The experimental results are correlated with numerical simulation based on a three-dimensional Haasen-Alexander-Sumino (HAS) model. The dislocation introduction is caused by an activation of different slip systems in different ingot areas. (C) 2014 Elsevier By. All rights reserved.

引用

页码：19 / 24

页数：6

共 27 条

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