Effect of Strain Relaxation in InGaN/GaN Multi-Quantum Wells with Self-Assembled Pt Nanoclusters

被引：2
作者：
Park, Ah Hyun [1 ]
Oh, Tae Su [2 ]
Seo, Tae Noon [1 ]
Lee, Seul Be [1 ]
Lee, Gun Hee [1 ]
Suh, Eun-Kyung [1 ]
机构：
[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea
[2] LG Elect, Seoul 137724, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
InGaN/GaN Multi-Quantum Well; Pt Nanocluster; Photoluminescence; RAMAN; GAN;
D O I：
10.1166/jnn.2014.9938
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We report effect of the strain relaxation in InGaN/GaN multi-quantum well (MOW) structures grown on platinum nanocluster-coated sapphire substrate (PNSS) by metal organic chemical vapor deposition. The photoluminescence (PL) intensity of InGaN/GaN MQWs on PNSS was significantly enhanced compared to that of the InGaN/GaN MQWs on flat sapphire substrate due to the reduction of defect density and residual strain by self-assembled Pt nanoclusters. We confirmed the reduction of strain-induced piezoelectric field by the power dependence of the PL in InGaN/GaN MQWs on PNSS. Cathodoluminescence shows that a large bright area with overall strong peak intensity is attributed to the suppression of In inhomogeneity and strain relaxation in InGaN/GaN MQWs on PNSS. Based on these results, we suggest that the self-assembled Pt nanocluster can be applied to increase the quantum efficiency through improved crystal quality and internal strain relaxation in MQWs.
引用
收藏
页码：8347 / 8351
页数：5
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