Effect of Strain Relaxation in InGaN/GaN Multi-Quantum Wells with Self-Assembled Pt Nanoclusters

被引：2

作者：

Park, Ah Hyun ^{[1
]}

Oh, Tae Su ^{[2
]}

Seo, Tae Noon ^{[1
]}

Lee, Seul Be ^{[1
]}

Lee, Gun Hee ^{[1
]}

Suh, Eun-Kyung ^{[1
]}

机构：

[1] Chonbuk Natl Univ, Sch Semicond & Chem Engn, Semicond Phys Res Ctr, Jeonju 561756, South Korea

[2] LG Elect, Seoul 137724, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2014年 / 14卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

InGaN/GaN Multi-Quantum Well; Pt Nanocluster; Photoluminescence; RAMAN; GAN;

D O I：

10.1166/jnn.2014.9938

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report effect of the strain relaxation in InGaN/GaN multi-quantum well (MOW) structures grown on platinum nanocluster-coated sapphire substrate (PNSS) by metal organic chemical vapor deposition. The photoluminescence (PL) intensity of InGaN/GaN MQWs on PNSS was significantly enhanced compared to that of the InGaN/GaN MQWs on flat sapphire substrate due to the reduction of defect density and residual strain by self-assembled Pt nanoclusters. We confirmed the reduction of strain-induced piezoelectric field by the power dependence of the PL in InGaN/GaN MQWs on PNSS. Cathodoluminescence shows that a large bright area with overall strong peak intensity is attributed to the suppression of In inhomogeneity and strain relaxation in InGaN/GaN MQWs on PNSS. Based on these results, we suggest that the self-assembled Pt nanocluster can be applied to increase the quantum efficiency through improved crystal quality and internal strain relaxation in MQWs.

引用

页码：8347 / 8351

页数：5

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