C-band complementary metal-oxide-semiconductor bandpass filter using active capacitance circuit

被引:14
作者
Wang, Sen [1 ]
Lin, Wen-Jie [1 ]
机构
[1] Natl Taipei Univ Technol, Dept Elect Engn, Taipei 10608, Taiwan
关键词
band-pass filters; Chebyshev filters; active filters; capacitance; resonator filters; inductors; CMOS integrated circuits; power consumption; microwave resonators; microwave filters; MIS devices; C-band complementary metal-oxide-semiconductor bandpass filter; active capacitance circuit; second-order Chebyshev active bandpass fllter; resonator resistive loss; shunt-feedback inductor; fllter selectivity improvement; CMOS technology; insertion loss; return loss; NF; frequency; 5; 3; GHz; HIGH DYNAMIC-RANGE; TRANSMISSION ZEROS; CMOS TECHNOLOGY; K-BAND; DESIGN; TRANSCEIVER; INDUCTORS; RADAR;
D O I
10.1049/iet-map.2013.0497
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a second-order Chebyshev active bandpass filter with three finite transmission zeros at C-Band is presented. This filter utilises an active capacitance technique to compensate resistive losses of resonators, and a shunt-feedback inductor between input and output to achieve the transmission zeros in the bandpass filter. Moreover, one transmission zero is in the lower stopband, and two transmission zeros are in the upper stopband, thus improving the selectivity of the filter significantly. The filter is designed and fabricated in a standard 0.18 m CMOS technology with a chip area of 0.92 mm x 0.76 mm including all testing pads. The filter achieves 0.77 dB insertion loss, 18 dB return loss, and 32% 3 dB bandwidth at 5.3 GHz with 2.2 mW power consumption. The measured NF and input P1 dB is 4.3 dB and 2.5 dBm, respectively. Finally, the rejection levels at these transmission zeros are greater than 14.4 dB.
引用
收藏
页码:1416 / 1422
页数:7
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