Minority carrier injection and current-voltage characteristics of Schottky diodes at high injection level

被引：11

作者：

Mnatsakanov, Tigran T. ^{[1
]}

Levinshtein, Michael E. ^{[2
]}

Tandoev, Alexey G. ^{[1
]}

Yurkov, Sergey N. ^{[1
]}

Palmour, John W. ^{[3
]}

机构：

[1] All Russia Electrotech Inst, Krasnokazarmennaya 12, Moscow 111250, Russia

[2] Ioffe Inst St Petersburg, 26 Politekhnicheskaya, St Petersburg 194021, Russia

[3] Wolfspeed, 3026 East Cornwallis Rd, Res Triangle Pk, NC 27709 USA

来源：

SOLID-STATE ELECTRONICS | 2016年 / 121卷

关键词：

Schottky diodes; Silicon carbide; Forward bias; High current density; Minority carriers; POWER DIODES; PULSE; TRANSPORT;

D O I：

10.1016/j.sse.2016.04.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transport phenomena in Schottky diodes are analyzed at high injection levels of minority carriers. It is shown that the correct description of these phenomena requires that the mode of diffusion stimulated by the quasi-neutral drift (DSQD) should be considered. An analytical expression for current-voltage characteristics of a Schottky diode at high injection levels is derived. The expression predicts a seemingly paradoxical result: the higher the base doping level, the higher the voltage drop across a diode at the same current density. The analytical results are confirmed by computer simulations. The results may be important for analyses of SiC Junction Barrier Schottky (JBS) diodes at very high current densities (surge current mode). (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：41 / 46

页数：6

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