Improved performance of SiGe doped-channel field-effect transistor using inductively coupled plasma etch

In this paper, we report, for the first time, the fabrication and characterization of Si/SiGe doped-channel field-effect transistors (DCFETs) using an inductively coupled plasma (ICP) dry etching process. ICP can generate high-density plasma under low pressure, independently control plasma density as well as ion bombardment energy, give a better anisotropic etching profile and almost eliminate the parasitic current path between isolated devices. Experimental results show that the doped-channel FET using ICP mesa has higher breakdown voltage, lower leakage current, higher transconductance and larger current drivability as compared to devices fabricated using wet mesa etching.