Dark current Model of Quantum Dot Infrared Photodetectors based on the influence of the drift velocity of the electrons

被引:1
作者
Liu, Hongmei [1 ]
Yang, Chunhua [1 ]
Shi, YunLong [1 ]
机构
[1] Shanxi Datong Univ Shanxi Prov, Higher Educ Key Lab New Microstruct Funct Mat, Datong City 037009, Shanxi, Peoples R China
来源
MECHATRONICS ENGINEERING, COMPUTING AND INFORMATION TECHNOLOGY | 2014年 / 556-562卷
关键词
Dark current; QDIP; drift velocity; mobility;
D O I
10.4028/www.scientific.net/AMM.556-562.2141
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Quantum dot infrared photodetectors (QDIPs) have already attracted more and more attention in recent years due to its superior performance. In this paper, a model for the dark current of the QDIP is built. This model supposes that the dark current in the potential barriers is equal to the dark current of the total device according to the structure of the QDIP, and the total electrons transport, the drift velocity and the mobility dependences on the electric field are also taken into account. The corresponding results show the correctness and the validity of the dark current model.
引用
收藏
页码:2141 / 2144
页数:4
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