A T-Shaped SOI Tunneling Field-Effect Transistor With Novel Operation Modes

被引：6

作者：

Liu, Chenhe ^{[1
,2
]}

Ren, Qinghua ^{[1
]}

Chen, Zhixi ^{[1
]}

Zha, Lantian ^{[1
,2
]}

Liu, Chang ^{[1
]}

Liu, Qiang ^{[1
,2
]}

Yu, Wenjie ^{[1
,2
]}

Liu, Xinke ^{[3
]}

Zhao, Qing-Tai ^{[4
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China

[3] Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Guangdong, Peoples R China

[4] Forschungszentrum Julich, Peter Grunberg Inst 9, D-52425 Julich, Germany

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2019年 / 7卷 / 01期

关键词：

TFET; SOI; ambipolar; low power; DESIGN; TFETS;

D O I：

10.1109/JEDS.2019.2947695

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present a novel T-shaped tunneling field-effect transistor (TFET) on Si-on-insulator (SOI). The asymmetric source-drain structure can effectively suppress the ambipolar switching. The on-current (I-on)/off-current (I-off) ratio reaches very high value of similar to 10(8) at V-ds = -0.5 V with a smaller tunneling junction width at the drain. The innovative T-shape design allows integration of both TFET and metaloxide semiconductor field-effect transistors (MOSFET) operation modes in one structure. Both TFET and MOSFET operation modes are experimentally demonstrated in this device structure, which provide the implementation of the selector function with the single device.

引用

页码：1114 / 1118

页数：5

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