Electron transport in rubrene single-crystal transistors

被引：52

作者：

Bisri, Satria Zulkarnaen ^{[1
]}

Takenobu, Taishi ^{[1
,2
]}

Takahashi, Tetsuo ^{[1
]}

Iwasa, Yoshihiro ^{[1
,3
]}

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Precursory Res Embryon Sci & Technol PRESTO, Chiyoda Ku, Tokyo 1020075, Japan

[3] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol CREST, Saitama 3300012, Japan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; MOBILITY; GROWTH;

D O I：

10.1063/1.3419899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a study of impurity effects on the electron transport of rubrene single crystals. A significant improvement of electron carrier mobility up to 0.81 cm(2)/V s is achieved by performing multiple purifications of single crystals and device aging inside an N-2-filled glove box. The hole/electron mobility ratio obtained is in good agreement with the reported theoretical calculation, suggesting that the intrinsic electron transport of organic semiconductors is also exploitable in a manner similar to that of hole transport. (C) 2010 American Institute of Physics. [doi:10.1063/1.3419899]

引用

页数：3

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