Sulfurization of α-MoO3 Nanostructured Thin Film

被引:6
作者
Kumar, Prabhat [1 ]
Singh, Megha [1 ]
Sharma, Rabindar K. [1 ]
Reddy, G. B. [1 ]
机构
[1] Indian Inst Technol Delhi, Dept Phys, Thin Film Lab, New Delhi 110016, India
来源
ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2015) | 2015年 / 1675卷
关键词
MONOLAYER MOS2; MOO3;
D O I
10.1063/1.4929267
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this report, the sulfurization of vertically aligned molybdenum trioxide (alpha-MoO3) nanoflakes (NFs) with high aspect ratio (height/thickness >20) on the nickel coated glass substrates in a mixture of H2S and argon gas at atmospheric pressure has been studied. The effect of sulfurization have been investigated to understand the basic reaction mechanism and the morphology, structural properties of grown nanoflakes. XPS and XRD indicate the formation of MoS2 along with the other intermediate phase such as MoO2 at temperature 200 degrees C. The surface morphology of samples have been studied systematically by using scanning electron microscope (SEM). The results demonstrate partial conversion of MoO3 NFs into MoS2 along with the change in the morphology of nanoflakes. All the observed results are well in consonance with each other.
引用
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页数:4
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