InGaN-GaN Disk Laser for Blue-Violet Emission Wavelengths

被引：16

作者：

Debusmann, R. ^{[1
]}

Dhidah, N. ^{[2
]}

Hoffmann, V. ^{[3
]}

Weixelbaum, L. ^{[3
]}

Brauch, U. ^{[2
]}

Graf, T. ^{[2
]}

Weyers, M. ^{[3
]}

Kneissl, M. ^{[1
,3
]}

机构：

[1] Tech Univ Berlin, Inst Solid State Phys, D-10623 Berlin, Germany

[2] Univ Stuttgart, Inst Strahlwerkzeuge, D-70569 Stuttgart, Germany

[3] Ferdinand Braun Inst Hoechstfrequenztech FBH, D-12489 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 09期

关键词：

Gallium compounds; indium compounds; nitrogen compounds; optical pumping; quantum-well (QW) lasers; semiconductor lasers; EMITTING SEMICONDUCTOR-LASERS; HIGH-POWER; OPERATION;

D O I：

10.1109/LPT.2010.2043668

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optically pumped InGaN-GaN surface-emitting laser with external cavity emitting at 393 nm has been realized. The peak output power is 300W, the slope efficiency 3.5%, and the threshold pump power density 700 kW/cm(2). Critical parameters in the design of the laser will be discussed and ways to improve the performance will be suggested.

引用

页码：652 / 654

页数：3

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