In Situ Reaction Mechanism Studies on Ozone-Based Atomic Layer Deposition of Al2O3 and HfO2

被引：38

作者：

Rose, Martin ^{[1
]}

Niinistoe, Jaakko ^{[2
,3
]}

Endler, Ingolf ^{[1
]}

Bartha, Johann W. ^{[4
]}

Kuecher, Peter ^{[2
]}

Ritala, Mikko ^{[3
]}

机构：

[1] Fraunhofer IKTS, D-01277 Dresden, Germany

[2] Fraunhofer CNT, D-01099 Dresden, Germany

[3] Univ Helsinki, Dept Chem, FI-00014 Helsinki, Finland

[4] Tech Univ Dresden, IHM, Dept Elect Engn & Informat Technol, D-01062 Dresden, Germany

来源：

ACS APPLIED MATERIALS & INTERFACES | 2010年 / 2卷 / 02期

基金：

芬兰科学院;

关键词：

atomic layer deposition; quadrupole mass spectrometry; ozone; in situ; process monitoring; active oxygen; THIN-FILMS; CYCLOPENTADIENYL; DIELECTRICS;

D O I：

10.1021/am900807a

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The mechanisms OF technologically important atomic layer deposition (ALD) processes, trimethylaluminium (TMA)/ozone and tetrakis(ethylmethylamino)hafnium (TEMAH)/ozone, for the growth of Al2O3 and HfO2 thin films are studied in situ by a quadrupole mass spectrometer coupled with a 300 mm ALD reactor. In addition to released CH4 and CO2, water was detected as one of the reaction byproduct in the TMA/O-3 process. In the TEMAH/O-3 process, the surface after the ozone pulse consisted of chemisorpted active oxygen and -OH groups, leading to the release of H2O, CO2, and HNEtMe during the metal precursor pulse.

引用

页码：347 / 350

页数：4

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