LOW POWER SINGLE ELECTRON OR/NOR GATE OPERATING AT 10GHz

被引：4

作者：

Tsiolakis, T. ^{[1
]}

Alexiou, G. Ph. ^{[1
]}

Konofaos, N. ^{[2
]}

机构：

[1] Univ Patras, Dept Comp Engn & Informat, GR-26500 Patras, Greece

[2] Univ Aegean, Dept Informat & Commun Syst Engn, GR-83200 Karlovassi Samos, Greece

来源：

IEEE ANNUAL SYMPOSIUM ON VLSI (ISVLSI 2010) | 2010年

关键词：

Circuit free energy; circuit stability; Coulomb blockade; Monte Carlo method; single electron gate; single electron design and simulation; single electron transistor (SET); single electron tunneling; single electronics; noise; SIMULATION; DESIGN; DEVICES;

D O I：

10.1109/ISVLSI.2010.78

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

the design and simulation of a single-electron OR/NOR gate is being presented using a Monte Carlo based tool. Both the OR/NOR behavior and the stability were verified while the free energy behavior of the circuit was also examined. The results confirmed that the circuit behaved as an OR/NOR gate, depicting improved characteristics than previously published single electron OR circuits, achieving a really fast operational speed at low power. Moreover, the noise through the circuit was nearly diminished, while a stable behavior of the circuit was verified without any noise present at the output points.

引用

页码：273 / 276

页数：4

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