Analytic extension of the cell-based oxide breakdown model to full percolation and its implications

被引：30
作者：
Krishnan, Anand T. [1 ]
Nicollian, Paul E. [1 ]
机构：
[1] Texas Instruments Inc, Silicon Technol Dev, 13560 N Cent Expressway,MS-3740, Dallas, TX 75243 USA
来源：
2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL | 2007年
关键词：
TDDB; Percolation model; oxide reliability; GOI;
D O I：
10.1109/RELPHY.2007.369897
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
We extend the cell-based approach of Sune to full percolation that is predictive down to 0.4mn. We resolve conflicting reports in the literature on the scaling behavior of the Weibull shape parameter with oxide thickness, and show that Weibull statistics can be violated if pre-existing traps are present.
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收藏
页码：232 / +
页数：2
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