Multi-gate SOI MOSFETs

被引：181
作者：
Colinge, J. P.
机构：
[1] Natl Univ Ireland Univ Coll Cork, Tyndall Natl Inst, Cork, Ireland
[2] Univ Calif Davis, Dept Elect Engn, Davis, CA 95616 USA
来源：
MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 9-10期
关键词：
FinFET; MuGFET; trigate FET; SOI; double-gate FET; GAA;
D O I：
10.1016/j.mee.2007.04.038
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes the evolution of the SOI MOSFET from single-gate structures to multigate (double-gate, trigate, Pi-gate, Omega-gate and gate-all-around) structures. Increasing the "effective number of gates" improves the electrostatic control of the channel by the gate and, hence, reduces short-channel effects. Due to the very small dimensions of the devices, one-and two-dimensional confinement effects are observed, which results in the need of developing quantum modeling tools for accurate prediction of the electrical characteristics of the devices.
引用
收藏
页码：2071 / 2076
页数：6
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