Controllable Fabrication of Nanostructured Graphene Towards Electronics

Due to graphene's exceptional electronic properties, strong efforts are being made to push forward its nanoelectronic applications. However, the gapless band structure of truly 2D graphene makes it unsuitable for direct use in graphene-based field-effect transistors (FETs), which is one of the most widely discussed graphene applications in electronics. Therefore, in order to accomplish graphene's applications in semiconducting nanoelectronics, it is necessary to produce nanostructured graphene with sufficiently narrow characteristic width, thus introducing further confinement and opening a reasonably large band gap. In this article, the theoretical predictions of nanostructured graphene's various properties are briefly introduced, and then the recent progress in preparation methods are reviewed to make an objective appraisal in terms of narrow enough width and crystallographically determined edges based on the theoretical and experimental investigations of physical properties. Newly emerging nanostructured graphene arrays are also introduced, which are essential for the integration of devices. In addition, electronic devices based on graphene nanostructures or heterostructures, such as FETs and sensors, are also reviewed, including device construction and performance. This article is aimed at summarizing the most practical and efficient method oriented at a specific target and promoting the fundamental research and industrial applications of nanostructured graphene.