The BiCu1-xOS oxysulfide: Copper deficiency and electronic properties

被引：18

作者：

Berthebaud, D. ^{[1
]}

Guilmeau, E. ^{[1
]}

Lebedev, O. I. ^{[1
]}

Maignan, A. ^{[1
]}

Gamon, J. ^{[2
]}

Barboux, P. ^{[2
]}

机构：

[1] UCBN, Lab CRISMAT, ENSICAEN, UMR 6508,CNRS, 6 Bd Marechal Juin, F-14050 Caen 4, France

[2] Ecole Natl Super Chim Paris, Inst Rech Chim Paris, 11 Rue Pierre & Marie Curie, F-75231 Paris 09, France

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2016年 / 237卷

关键词：

Oxysulfide; HAADF-STEM; Electrical resistivity; Thermopower; THERMOELECTRIC PERFORMANCE; BICUSEO; OXYCHALCOGENIDES; BI; SE;

D O I：

10.1016/j.jssc.2016.02.033

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

An oxysulfide series of nominal compositions BiCu1-xOS with x < 0.20 has been prepared and its structural properties characterized by combining powder X-ray diffraction and transmission electron microscopy techniques. It is found that this oxysulfide, crystallizing in the P4/nmm space group, tends to adopt a constant amount of copper vacancy corresponding to x=0.05 in the BiCu1-xOS formula. The presence of Cu vacancies is confirmed by HAADF-STEM analysis showing, in the Cu atomic columns, alternating peaks of different intensities in some very localized regions. For larger Cu deficiencies (x > 0.05 in the nominal composition), other types of structural nanodefects are evidenced such as bismuth oxysulfides of the "BiOS" ternary system which might explain the report of superconductivity for the BiCu1-xOS oxysulfide. Local epitaxial growth of the BiCuOS oxysulfide on top of CuO is also observed. In marked contrast to the BiCu1-xOSe oxyselenide, these results give an explanation to the limited impact of Cu deficiency on the Seebeck coefficient in BiCu1-xOS compounds. (C) 2016 Elsevier Inc. All rights reserved.

引用

页码：292 / 299

页数：8

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