High-power laser diodes of the spectral region of 808 nm and 980 nm

被引：1
|
作者：
Bezotosnyi, V. V.
Bondarev, V. Yu.
Krivonos, M. S.
Oleshchenko, V. A.
Popov, Yu. M.
Cheshev, E. A.
机构：
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2010年 / 37卷 / 05期
关键词：
high-power laser diodes; 808; and; 980; nm; assembly technique;
D O I：
10.3103/S1068335610050052
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A technique for assembling high-power laser diodes emitting at 808 and 980 nm was developed, which stably provides high radiation parameters when using one of the standard types of heat sinks for assembling high-power laser diodes, i.e., the C-mount. The maximum achievable power of laser diodes with a stripe contact width of 150 A mu m in the cw lasing mode was 25 W at a temperature of 20 A degrees C.
引用
收藏
页码：143 / 144
页数：2
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