Confined-phonon effects in the band-gap renormalization of semiconductor quantum wires

被引：34

作者：

Bennett, CR ^{[1
]}

Guven, K

Tanatar, B

机构：

[1] Univ Essex, Dept Phys, Colchester CO4 3SQ, Essex, England

[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey

来源：

PHYSICAL REVIEW B | 1998年 / 57卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.57.3994

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We calculate the band-gap renormalization in quasi-one-dimensional semiconductor quantum wires including carrier-carrier and carrier-phonon interactions. We use the quasistatic approximation to obtain the self-energies at the band edge that define the band-gap renormalization. The random-phase approximation at finite temperature is employed to describe the screening effects, We find that confined LO-phonon modes through their interaction with the electrons and holes modify the band gap significantly and produce a larger value than the static epsilon(0) approximation. [S0163-1829(98)01007-8].

引用

页码：3994 / 3999

页数：6

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