Confined-phonon effects in the band-gap renormalization of semiconductor quantum wires

被引:33
作者
Bennett, CR [1 ]
Guven, K
Tanatar, B
机构
[1] Univ Essex, Dept Phys, Colchester CO4 3SQ, Essex, England
[2] Bilkent Univ, Dept Phys, TR-06533 Ankara, Turkey
来源
PHYSICAL REVIEW B | 1998年 / 57卷 / 07期
关键词
D O I
10.1103/PhysRevB.57.3994
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We calculate the band-gap renormalization in quasi-one-dimensional semiconductor quantum wires including carrier-carrier and carrier-phonon interactions. We use the quasistatic approximation to obtain the self-energies at the band edge that define the band-gap renormalization. The random-phase approximation at finite temperature is employed to describe the screening effects, We find that confined LO-phonon modes through their interaction with the electrons and holes modify the band gap significantly and produce a larger value than the static epsilon(0) approximation. [S0163-1829(98)01007-8].
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页码:3994 / 3999
页数:6
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