Treatment effects on deep levels in CdTe based solar cells

被引：10

作者：

Gilmore, AS ^{[1
]}

Kaydanov, V ^{[1
]}

Ohno, TR ^{[1
]}

Rose, D ^{[1
]}

Feldman, SD ^{[1
]}

Erslev, P ^{[1
]}

机构：

[1] Colorado Sch Mines, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190637

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This paper presents capacitance-voltage, admittance spectroscopy, and drive-level capacitance profiling (DLCP) data on CdTe solar cells prepared with and without standard treatments (CdCl2 treatment and/or BrMeOH etch). The DLCP technique confirmed previous results and added the ability to measure deep. trapping state spatial, distributions. The concentrations and depth profiles of the deep states observed depended, upon the treatments used. High concentrations (>1x10(15)cm(-3)) Of trapping states with a variety of characteristic frequencies exist in all cells studied. The sample with neither standard treatment had the lowest concentration of deep trapping states.

引用

页码：604 / 607

页数：4

共 5 条

[1]

ABOUELFOTOUH F, 1993, P 23 IEEE PHOT SPEC, P491

[2]

GILMORE AS, 2001, NCPV REV M, P187

[3] DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].