Comparison of non-polar ZnO (1 1 (2)over-bar-0) films deposited on single crystal ZnO (1 1 (2)over-bar-0) and sapphire (0 1 (1)over-bar-2) substrates

被引：22
作者：
Kashiwaba, Y.
Abe, T.
Onodera, S.
Masuoka, F.
Nakagawa, A.
Endo, H.
Niikura, I.
Kashiwaba, Y.
机构：
[1] Sendai Natl Coll Technol, Sendai, Miyagi 9893128, Japan
[2] Iwate Univ, Morioka, Iwate 0208551, Japan
[3] Iwate Ind Res Inst, Morioka, Iwate 0200852, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2007年 / 298卷 / 477-480期
关键词：
X-ray diffraction; metalorganic chemical vapor deposition; Zn compounds; semiconducting II-VI materials;
D O I：
10.1016/j.jcrysgro.2006.10.062
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Homo- and heteroepitaxial growth of non-polar Zinc oxide (ZnO) (1 1 (2) over bar 0) films was achieved on single crystal ZnO (1 1 (2) over bar0) and sapphire (0 1 (1) over bar2) substrates by an atmospheric pressure metal-organic chemical vapor deposition (MOCVD) using zinc acetylacetonate and oxygen gas. The full-widths at half-maximum (FWHM) of X-ray diffraction patterns of grazing incident diffraction measurement of homoepitaxial ZnO films were smaller by one order of magnitude than those., of heteroepitaxial ZnO films. A striped pattern along the c-axis of ZnO was clearly observed in homoepitaxial films deposited at 650 degrees C. Room temperature photoluminescence spectra of homoepitaxial films exhibited only a strong near-band-edge emission. Free exciton emissions were clearly observed in the photoluminescence spectra of homoepitaxial ZnO films at 5K. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：477 / 480
页数：4
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