Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

被引：77

作者：

Raynaud, Christophe ^{[1
]}

Tournier, Dominique ^{[1
]}

Morel, Herve ^{[1
]}

Planson, Dominique ^{[1
]}

机构：

[1] Univ Lyon, CNRS, UMR 5005, INSA Lyon,Lab Ampere, F-69621 Villeurbanne, France

来源：

关键词：

Wide bandgap; Power semiconductor devices; Semiconductor materials; IMPACT IONIZATION; NITROGEN DONORS; BREAKDOWN VOLTAGE; ELECTRON-MOBILITY; JBS DIODES; ENERGY-GAP; DIAMOND; 4H; KV; DEPENDENCE;

D O I：

10.1016/j.diamond.2009.09.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature dependent properties of wide bandgap semiconductors have been used to calculate theoretical specific on-resistance. breakdown voltage, and thermal run-away temperature in SiC GaN, diamond, and Si vertical power devices for comparison It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30-40 kV due to the high energy activation of the dopants (C) 2009 Elsevier B.V. All rights reserved

引用

页码：1 / 6

页数：6

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