Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices

被引:77
作者
Raynaud, Christophe [1 ]
Tournier, Dominique [1 ]
Morel, Herve [1 ]
Planson, Dominique [1 ]
机构
[1] Univ Lyon, CNRS, UMR 5005, INSA Lyon,Lab Ampere, F-69621 Villeurbanne, France
关键词
Wide bandgap; Power semiconductor devices; Semiconductor materials; IMPACT IONIZATION; NITROGEN DONORS; BREAKDOWN VOLTAGE; ELECTRON-MOBILITY; JBS DIODES; ENERGY-GAP; DIAMOND; 4H; KV; DEPENDENCE;
D O I
10.1016/j.diamond.2009.09.015
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Temperature dependent properties of wide bandgap semiconductors have been used to calculate theoretical specific on-resistance. breakdown voltage, and thermal run-away temperature in SiC GaN, diamond, and Si vertical power devices for comparison It appears mainly that diamond is interesting for high power devices for high temperature applications. At room temperature, diamond power devices should be superior to SiC only for voltage higher than 30-40 kV due to the high energy activation of the dopants (C) 2009 Elsevier B.V. All rights reserved
引用
收藏
页码:1 / 6
页数:6
相关论文
共 58 条
[1]   Critical Technical Issues in High Voltage SiC Power Devices [J].
Agarwal, Anant ;
Burk, Al ;
Callanan, Robert ;
Capell, Craig ;
Das, Mrinal ;
Haney, Sarah ;
Hull, Brett ;
Jonas, Charlotte ;
O'Loughlin, Michael ;
O'Neill, Michael ;
Palmour, John ;
Powell, Adrian ;
Richmond, James ;
Ryu, Sei-Hyung ;
Stahlbush, Robert ;
Sumakeris, Joe ;
Zhang, Jon .
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :895-+
[2]   Ensemble Monte Carlo calculation of hole transport in bulk 3C-SiC [J].
Bellotti, E ;
Nilsson, HE ;
Brennan, KF ;
Ruden, PP .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3211-3217
[3]   TEMPERATURE-DEPENDENCE OF BAND-GAP OF SILICON [J].
BLUDAU, W ;
ONTON, A ;
HEINKE, W .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1846-1848
[4]  
Bougrov V, 2001, PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, P1
[5]   Exceptionally high voltage Schottky diamond diodes and low boron doping [J].
Butler, JE ;
Geis, MW ;
Krohn, KE ;
Lawless, J ;
Deneault, S ;
Lyszczarz, TM ;
Flechtner, D ;
Wright, R .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (03) :S67-S71
[6]   TEMPERATURE DEPENDENCE OF BREAKDOWN VOLTAGE IN SILICON ABRUPT P-N JUNCTIONS [J].
CHANG, CY ;
CHIU, SS ;
HSU, LP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (06) :391-&
[7]   High-Temperature Operation of 50 A (1600 A/cm2), 600 V 4H-SiC Vertical-Channel JFETs for High-Power Applications [J].
Cheng, L. ;
Sankin, I. ;
Bondarenko, V. ;
Mazzola, M. S. ;
Scofield, J. D. ;
Sheridan, D. C. ;
Martin, P. ;
Casady, J. R. B. ;
Casady, J. B. .
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1055-+
[8]   ELECTRON MOBILITIES IN GALLIUM, INDIUM, AND ALUMINUM NITRIDES [J].
CHIN, VWL ;
TANSLEY, TL ;
OSTOCHAN, T .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) :7365-7372
[9]   High breakdown voltage C-doped GaN-on-sapphire HFETs with a low specific on-resistance [J].
Choi, Y. C. ;
Pophristic, M. ;
Peres, B. ;
Cha, H-Y ;
Spencer, M. G. ;
Eastman, L. F. .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2007, 22 (05) :517-521
[10]   High-voltage SiC and GaN power devices [J].
Chow, TP .
MICROELECTRONIC ENGINEERING, 2006, 83 (01) :112-122