Study of Low Power Deposition of ITO for Top Emission OLED with Facing Target and RF sputtering Systems

被引：10

作者：

Dangtip, S. ^{[1
]}

Hoshi, Y. ^{[2
]}

Kasahara, Y. ^{[2
]}

Onai, Y.

Osotchan, T. ^{[1
,2
]}

Sawada, Y.

Uchida, T.

机构：

[1] Mahidol Univ, Fac Sci, Dept Phys, Bangkok 10400, Thailand

[2] Tokyo Polytech Univ, Kanagawa 2430297, Japan

来源：

PROCEEDINGS OF THE 17TH INTERNATIONAL VACUUM CONGRESS/13TH INTERNATIONAL CONFERENCE ON SURFACE SCIENCE/INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY | 2008年 / 100卷

基金：

日本学术振兴会;

关键词：

D O I：

10.1088/1742-6596/100/4/042011

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Deposition of ITO as top transparent electrode was studied using two deposition systems with and without direct contact to working plasma; namely with conventional RF-magnetron planar (RSS) and pulsed-DC facing target sputtering systems (FTS). Test devices were made on glass substrates and consisted of ( from bottom up) ITO/4 Organic Layers/ITO. Depositions were performed at low deposition powers; 30 and 60 watts, to reduce damages by energetic sputtered particles to underlying organic layers. Test devices from both sputtering systems were found to function well. Leakage current density at -5 V reverse bias were relatively constant from 0.3 and 0.4 mA/cm(2) at 30 W and 60 W in FTS, while the values were found to increase from 0.001 to 0.2 mA/cm(2) at 30 W and 60 W in RSS.

引用

页数：6

共 12 条

[1] Low-stress indium-tin-oxide thin films rf magnetron sputtered on polyester substrates [J].

Carcia, PF ;

McLean, RS ;

Reilly, MH ;

Li, ZG ;

Pillione, LJ ;

Messier, RF .

APPLIED PHYSICS LETTERS, 2002, 81 (10) :1800-1802

[2] Inverted top-emitting organic light-emitting diodes using sputter-deposited anodes [J].

Dobbertin, T ;

Kroeger, M ;

Heithecker, D ;

Schneider, D ;

Metzdorf, D ;

Neuner, H ;

Becker, E ;

Johannes, HH ;

Kowalsky, W .

APPLIED PHYSICS LETTERS, 2003, 82 (02) :284-286

[3] Transparent stacked organic light emitting devices. I. Design principles and transparent compound electrodes [J].

Gu, G ;

Parthasarathy, G ;

Burrows, PE ;

Tian, P ;

Hill, IG ;

Kahn, A ;

Forrest, SR .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4067-4075

[4] Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering [J].

Hoshi, Y ;

Kato, H ;

Funatsu, K .

THIN SOLID FILMS, 2003, 445 (02) :245-250

[5] Direct Al cathode layer sputtering on LiF/Alq3 using facing target sputtering with a mixture of Ar and Kr [J].

Kim, HK ;

Kim, SW ;

Lee, KS ;

Kim, KH .

APPLIED PHYSICS LETTERS, 2006, 88 (08)

[6] Raman study of electric-field-induced first-order metal-insulator transition in VO2-based devices -: art. no. 242101 [J].

Kim, HT ;

Chae, BG ;

Youn, DH ;

Kim, G ;

Kang, KY ;

Lee, SJ ;

Kim, K ;

Lim, YS .

APPLIED PHYSICS LETTERS, 2005, 86 (24) :1-3

[7] Plasma diagnosis and low-substrate-temperature deposition of Ba ferrite films in a damage-free sputtering apparatus with mixed gases [J].

Matsushita, N ;

Noma, K ;

Nakagawa, S ;

Naoe, M .

VACUUM, 1998, 51 (04) :543-548

[8] FACING TARGETS TYPE OF SPUTTERING METHOD FOR DEPOSITION OF MAGNETIC METAL-FILMS AT LOW-TEMPERATURE AND HIGH-RATE [J].

NAOE, M ;

YAMANAKA, SI ;

HOSHI, Y .

IEEE TRANSACTIONS ON MAGNETICS, 1980, 16 (05) :646-648

[9] A low drive voltage, transparent, metal-free n-i-p electrophosphorescent light emitting diode [J].

Pfeiffer, M ;

Forrest, SR ;

Zhou, X ;

Leo, K .

ORGANIC ELECTRONICS, 2003, 4 (01) :21-26

[10] ORGANIC ELECTROLUMINESCENT DIODES [J].

TANG, CW ;

VANSLYKE, SA .

APPLIED PHYSICS LETTERS, 1987, 51 (12) :913-915

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