Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation

被引：1

作者：

Moller, D ^{[1
]}

Pham, MT ^{[1
]}

Huller, J ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1997年 / 43卷 / 1-3期

关键词：

silicon nitride; ion implantation; ion sensitivity;

D O I：

10.1016/S0925-4005(97)00197-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of Si(3)N4 implanted with Ag+ and S+ ions were studied using electrolyte insulator semiconductor measurements (EIS), Auger electron spectroscopy (AES), X-ray photo electron spectroscopy (XPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The ion implantation results in embedding silver metal particles, submicron in size, enveloped by a thin skin of Ag2S within the matrix layer. This composite material is shown to be responsible for the Ag+ ion sensitivity. The Ag+ ion sensitivity observed reveals values ranging from some millivolts to nearly Nernstian response. A modeling on the basis of site-binding theory was made to describe the ion sensitivity of the composite material surface. (C) 1997 Elsevier Science S.A.

引用

页码：110 / 113

页数：4

共 50 条

[41] Ion implantation of Cd and Ag into AlN and GaN [J].

Miranda, S. M. C. ;

Kessler, P. ;

Correia, J. G. ;

Vianden, R. ;

Johnston, K. ;

Alves, E. ;

Lorenz, K. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4, 2012, 9 (3-4) :1060-1064

[42] Electrical effects of nitrogen plasma immersion ion implantation on silicon [J].

Chen, SM ;

Shannon, JM ;

Gwilliam, RM ;

Sealy, BJ .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :901-904

[43] Accurate characterisation of silicon nitride films on rough silicon surfaces by ellipsometry [J].

Siah, S. C. ;

Hoex, B. ;

Aberle, A. G. .

PROCEEDINGS OF THE SILICONPV 2011 CONFERENCE (1ST INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS), 2011, 8 :122-127

[44] Determination of cubic boron nitride synthesized by ion implantation [J].

Suzuki, Yasuyuki ;

Hu, Cheng ;

Kotake, Shigeo ;

Senoo, Masafumi .

TRANSACTIONS OF THE MATERIALS RESEARCH SOCIETY OF JAPAN, VOL 33, NO 2, 2008, 33 (02) :327-330

[45] Metal ion implantation of multiwalled boron nitride nanotubes [J].

Obraztsova, E. A. ;

Shtansky, D. V. ;

Sheveyko, A. N. ;

Yamaguchi, M. ;

Kovalskii, A. M. ;

Golberg, D. .

SCRIPTA MATERIALIA, 2012, 67 (05) :507-510

[46] Flexural strength change of silicon nitride implanted by high dose titanium ions [J].

Zhang, JZ ;

Ye, XY ;

Chang, J ;

Tao, K .

MATERIALS LETTERS, 1997, 30 (04) :299-303

[47] Dose- and energy-dependent behaviour of silicon nitride films produced by plasma immersion ion implantation [J].

Rajkumar ;

Kumar, M ;

George, PJ ;

Mukherjee, S ;

Chari, KS .

SURFACE & COATINGS TECHNOLOGY, 2002, 156 (1-3) :272-275

[48] Formation of silicon nitride thin films by RF ion plating and their properties [J].

Kanemoto, N ;

Inoue, T ;

Daikoku, T ;

Baba, K .

MATERIALS TRANSACTIONS JIM, 1996, 37 (05) :1056-1060

[49] ELECTROCATALYST SURFACES MODELED BY ION-IMPLANTATION [J].

VALLET, CE ;

WHITE, CW .

ELECTROCHIMICA ACTA, 1994, 39 (11-12) :1537-1543

[50] Effect of helium ion beam treatment on the etching rate of silicon nitride [J].

Petrov, Yu. V. ;

Sharov, T. V. ;

Baraban, A. P. ;

Vyvenko, O. F. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 349 :90-95

← 1 2 3 4 5 →