Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation

被引：1

作者：

Moller, D ^{[1
]}

Pham, MT ^{[1
]}

Huller, J ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1997年 / 43卷 / 1-3期

关键词：

silicon nitride; ion implantation; ion sensitivity;

D O I：

10.1016/S0925-4005(97)00197-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of Si(3)N4 implanted with Ag+ and S+ ions were studied using electrolyte insulator semiconductor measurements (EIS), Auger electron spectroscopy (AES), X-ray photo electron spectroscopy (XPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The ion implantation results in embedding silver metal particles, submicron in size, enveloped by a thin skin of Ag2S within the matrix layer. This composite material is shown to be responsible for the Ag+ ion sensitivity. The Ag+ ion sensitivity observed reveals values ranging from some millivolts to nearly Nernstian response. A modeling on the basis of site-binding theory was made to describe the ion sensitivity of the composite material surface. (C) 1997 Elsevier Science S.A.

引用

页码：110 / 113

页数：4

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