Sensitization of silicon nitride surfaces for Ag+ ions by ion implantation

被引：1

作者：

Moller, D ^{[1
]}

Pham, MT ^{[1
]}

Huller, J ^{[1
]}

机构：

[1] Rossendorf Inc, Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1997年 / 43卷 / 1-3期

关键词：

silicon nitride; ion implantation; ion sensitivity;

D O I：

10.1016/S0925-4005(97)00197-4

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Thin films of Si(3)N4 implanted with Ag+ and S+ ions were studied using electrolyte insulator semiconductor measurements (EIS), Auger electron spectroscopy (AES), X-ray photo electron spectroscopy (XPS), transmission electron microscopy (TEM) and X-ray diffraction (XRD). The ion implantation results in embedding silver metal particles, submicron in size, enveloped by a thin skin of Ag2S within the matrix layer. This composite material is shown to be responsible for the Ag+ ion sensitivity. The Ag+ ion sensitivity observed reveals values ranging from some millivolts to nearly Nernstian response. A modeling on the basis of site-binding theory was made to describe the ion sensitivity of the composite material surface. (C) 1997 Elsevier Science S.A.

引用

页码：110 / 113

页数：4

共 50 条

[21] Synthesis of buried silicon nitride layer in SiC by nitrogen implantation [J].

Suvorova, A. A. ;

Suvorov, A. V. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 257 (217-221) :217-221

[22] A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation [J].

Demidov, ES ;

Karzanov, VV ;

Lobanov, DA ;

Markov, KA ;

Sdobnyakov, VV .

SEMICONDUCTORS, 2001, 35 (01) :20-23

[23] A long-range influence of the argon-ion irradiation on the silicon nitride layers formed by the ion implantation [J].

E. S. Demidov ;

V. V. Karzanov ;

D. A. Lobanov ;

K. A. Markov ;

V. V. Sdobnyakov .

Semiconductors, 2001, 35 :20-23

[24] Study of electronic properties and depth profiles of buried and near-surface silicon nitride layers produced by ion implantation [J].

Markwitz, A ;

Arps, M ;

Baumann, H ;

Demortier, G ;

Krimmel, EF ;

Bethge, K .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 124 (04) :506-514

[25] Structural analysis of textured silicon surfaces after ion implantation under tilted angle [J].

Kruegener, Jan ;

Bugiel, Eberhard ;

Peibst, Robby ;

Kiefer, Fabian ;

Ohrdes, Tobias ;

Brendel, Rolf ;

Osten, H. Joerg .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (09)

[26] Laser ion source for Ge implantation of silicon surfaces - art. no. 634634 [J].

Bellom, Fabio ;

Nassisi, Vincenzo ;

Torrisi, Lorenzo ;

Wolowski, Jerzy ;

Doria, Domenico ;

Lorussoa, Antonella ;

Velardi, Luciano .

XVI International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, Pts 1 and 2, 2007, 6346 :34634-34634

[27] Ion-Beam Synthesis of Ferromagnetic Films by the Implantation of Co+ Ions into Silicon [J].

Chirkov V.V. ;

Gumarov G.G. ;

Petukhov V.Y. ;

Denisov A.E. .

Journal of Surface Investigation, 2018, 12 (01) :149-153

[28] Effect of low-dose ion implantation on the stress of low-pressure chemical vapor deposited silicon nitride films [J].

Yamamoto, I ;

Kasai, N ;

Nishimoto, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (3B) :1256-1259

[29] Synthesis of amorphous carbon nitride by ion implantation [J].

Chen, Z ;

Olofinjana, A ;

Bell, J .

SCIENCE IN CHINA SERIES A-MATHEMATICS, 2001, 44 :330-335

[30] Synthesis of amorphous carbon nitride by ion implantation [J].

ChenZ. ;

OlofinjanaA. ;

BellJ .

Science China Mathematics, 2001, (S1) :330-335

← 1 2 3 4 5 →