Cathodoluminescence and TEM studies of MBE-grown CdSe submonolayers in ZnSe matrix, cladded by ZnSSe, ZnSe and ZnMgSe

被引:0
|
作者
Trubenko, PA
Kozlovsky, VI
Roddatis, VV
机构
[1] RAS, GPI, Fiber Opt Res Ctr, Moscow 117756, Russia
[2] RAS, PN Lebedev Phys Inst, Moscow 117924, Russia
[3] Russian Acad Sci, Inst Crystallog, Moscow 117333, Russia
基金
俄罗斯基础研究基金会;
关键词
MBE; CdSe/ZnSe SML; cathodoluminescence; TEM;
D O I
10.1016/S0022-0248(00)00175-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We have studied MBE-grown CdSe submonolayers (SMLs) using cathodoluminescence (CL) and transmission electron microscopy (TEM). The CdSe SMLs were embedded into ZnSe matrix layer and made to undergo different lattice strains from thick ZnSSe, ZnSe and ZnMgSe cladding layers. It was revealed that the CdSe SML emission line has different energy position and FWHM for the structures with variable cladding layers. This characteristic is attributed to the effect of strain in the ZnSe matrix layer and its surface roughness on the CdSe distribution along the surface. At the deposition of the CdSe SMLs on unstrained flat surface of ZnSe, the homogeneous quantum well (QW)-like CdZnSe alloy layer is formed. Using the strained roughness surface increases fluctuations in the Cd distribution along the surface. While, assuming the compressive ZnSe matrix (ZnSSe cladding layers), the CL line has to be broadening for the CdSe cluster organization only, in the case of structures with ZnMgSe cladding layers, low-energy offset is observed. This is due to the creation of the CdSe ML islands with relatively large lateral size. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:671 / 675
页数:5
相关论文
共 50 条
  • [31] High spatial resolution TEM studies of ZnSe/GaAs (001) interfaces grown by different MBE procedures
    Carlino, E
    Furlanetto, D
    Colli, A
    Franciosi, A
    MICROSCOPY OF SEMICONDUCTING MATERIALS 2003, 2003, (180): : 183 - 186
  • [32] Raman monitoring of selenium decapping and subsequent antimony deposition on MBE-grown ZnSe(100)
    TU-Chemnitz, Chemnitz, Germany
    Applied Surface Science, 1996, 104-105 : 485 - 489
  • [33] Raman monitoring of selenium decapping and subsequent antimony deposition on MBE-grown ZnSe(100)
    Drews, D
    Schneider, A
    Zahn, DRT
    Wolfframm, D
    Evans, DA
    APPLIED SURFACE SCIENCE, 1996, 104 : 485 - 489
  • [34] HIGH-DENSITY LUMINESCENCE AND EXCITATION SPECTROSCOPY OF MBE-GROWN ZNSE/GAAS EPILAYERS
    KUDLEK, G
    PRESSER, N
    GUTOWSKI, J
    DURBIN, S
    MENKE, D
    KOBAYASHI, M
    GUNSHOR, RL
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 667 - 672
  • [35] Temperature quenching mechanisms for photoluminescence of MBE-grown chlorine-doped ZnSe epilayers
    Wang, SZ
    Xie, SW
    Pang, QJ
    Zheng, H
    Xia, YX
    Ji, RB
    Wu, Y
    He, L
    Zhu, ZM
    Li, GH
    Wang, ZP
    JOURNAL OF CRYSTAL GROWTH, 2000, 220 (04) : 548 - 553
  • [36] OPTICAL-PROPERTIES OF MBE-GROWN ZNTE ON GAAS - EFFECTS OF A ZNSE BUFFER LAYER
    IIDA, F
    TAKOJIMA, N
    IMAI, K
    KUMAZAKI, K
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 139 (02): : 531 - 539
  • [37] NONLINEAR TRANSMISSION OF MBE-GROWN ZNSE EPILAYERS IN THE NEAR-BAND-EDGE REGION
    PRESSER, N
    KUDLEK, G
    GUTOWSKI, J
    MENKE, DR
    KOBAYASHI, M
    GUNSHOR, RL
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 10 (02) : 247 - 252
  • [38] Optical properties of CdSe/ZnSe nanostructures grown by MBE on virtual Si/Ge substrates
    Onishchenko, EE
    Kazakov, IP
    Rzaev, MM
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 4, 2006, 3 (04): : 905 - +
  • [39] E-beam irradiation effect on CdSe/ZnSe QD formation by MBE: deep level transient spectroscopy and cathodoluminescence studies
    Kozlovsky, VI
    Litvinov, VG
    Sadofyev, YG
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (02) : S133 - S140
  • [40] Electrical and structural properties of Cl-doped ZnSe MBE-grown with various doping techniques
    Kim, JS
    Kim, GH
    Suh, SH
    Chung, SJ
    JOURNAL OF CRYSTAL GROWTH, 1996, 159 (1-4) : 354 - 358