In-based quantum dots on AlxGa1-xAs surfaces

被引：13

作者：

Schramboeck, M. ^{[1
]}

Andrews, A. M. ^{[1
]}

Roch, T. ^{[1
]}

Schrenk, W. ^{[1
]}

Strasser, G. ^{[1
]}

机构：

[1] TU Wien, Zentrum Mikro & Nanostrukturen, Vienna, Austria

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

基金：

奥地利科学基金会;

关键词：

quantum dots; AlGaAs; InAs; GaAs; patterned substrates;

D O I：

10.1016/j.mee.2007.01.228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InAs quantum dots were grown with molecular beam epitaxy on nano-scale GaAs templates fabricated with laser holography. Due to local strain fields, preferential nucleation sites for the dots are generated and lateral alignment of the dots according to the pattern is achieved. The growth of quantum dots on AlxGa1-xAs surfaces with varying Al contents was studied in detail. The influence of the growth temperature, InAs deposition and in-situ annealing time on dot density and size is shown for surfaces with different Al contents. Photoluminescence (PL) measurements conducted on quantum dot stacks show an increased spectral broadening and a blueshift for higher Al concentrations. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1443 / 1445

页数：3

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