Self-heating effect in 1.3 μm p-doped InAs/GaAs quantum dot vertical cavity surface emitting lasers

被引：4

作者：

Xu, D. W. ^{[1
]}

Tong, C. Z. ^{[1
]}

Yoon, S. F. ^{[1
]}

Zhao, L. J. ^{[2
]}

Ding, Y. ^{[1
]}

Fan, W. J. ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 06期

关键词：

gallium arsenide; III-V semiconductors; indium compounds; quantum dot lasers; surface emitting lasers; DEPENDENT OUTPUT CHARACTERISTICS; VCSELS; WELL; CONFINEMENT; POWER;

D O I：

10.1063/1.3309954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-heating effect in 1.3 mu m p-doped InAs/GaAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) has been investigated using a self-consistent theoretical model. Good agreement is obtained between theoretical analysis and experimental results under pulsed operation. The results show that in p-doped QD VCSELs, the output power is significantly influenced by self-heating. About 60% of output power is limited by self-heating in a device with oxide aperture of 5x6 mu m(2). This value reduces to 55% and 48%, respectively, as the oxide aperture increases to 7x8 and 15x15 mu m(2). The temperature increase in the active region and injection efficiency of the QDs are calculated and discussed based on the different oxide aperture areas and duty cycle.

引用

页数：6

共 32 条

[1] Systematic study of the. effects of modulation p-doping on 1.3-μm quantum-dot lasers [J].

Alexander, Ryan R. ;

Childs, David T. D. ;

Agarwal, Harsh ;

Groom, Kristian M. ;

Liu, Hui-Yun ;

Hopkinson, Mark ;

Hogg, Richard A. ;

Ishida, Mitsuru ;

Yamamoto, Tsuyoshi ;

Sugawara, Mitsuru ;

Arakawa, Yasuhiko ;

Badcock, Tom J. ;

Royce, Richard J. ;

Mowbray, David J. .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2007, 43 (11-12) :1129-1139

[2]

[Anonymous], THERMAL CONDUCTIVITY

[3]

[Anonymous], SPECIFIC HEAT CAPACI

[4] Thermoelectrical model for vertical cavity surface emitting lasers and arrays [J].

Boiko, D. L. ;

Guerrero, G. ;

Kapon, E. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (10)

[5] Fabrication and modulation characteristics of 1.3 μm p-doped InAs quantum dot vertical cavity surface emitting lasers [J].

Ding, Y. ;

Fan, W. J. ;

Xu, D. W. ;

Tong, C. Z. ;

Yoon, S. F. ;

Zhang, D. H. ;

Zhao, L. J. ;

Wang, W. ;

Liu, Y. ;

Zhu, N. H. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (08)

[6] The role of Auger recombination in the temperature-dependent output characteristics (T0 = ∞) of p-doped 1.3 μm quantum dot lasers [J].

Fathpour, S ;

Mi, Z ;

Bhattacharya, P ;

Kovsh, AR ;

Mikhrin, SS ;

Krestnikov, IL ;

Kozhukhov, AV ;

Ledentsov, NN .

APPLIED PHYSICS LETTERS, 2004, 85 (22) :5164-5166

[7] InAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers [J].

Lao, Y. -F. ;

Cao, C. -F. ;

Wu, H. -Z. ;

Cao, M. ;

Gong, Q. .

ELECTRONICS LETTERS, 2009, 45 (02) :105-106

[8] High-speed quantum-dot vertical-cavity surface-emitting lasers [J].

Ledentsov, Nikolai N. ;

Hopfer, Friedhelm ;

Bimberg, Dieter .

PROCEEDINGS OF THE IEEE, 2007, 95 (09) :1741-1756

[9] Long-wavelength quantum-dot lasers on GaAs substrates: From media to device concepts [J].

Ledentsov, NN .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (05) :1015-1024

[10] Numerical investigation of self-heating effects of oxide-confined vertical-cavity surface-emitting lasers [J].

Liu, Y ;

Ng, WC ;

Choquette, KD ;

Hess, K .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2005, 41 (01) :15-25

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