The study of structural, electronic and thermoelectric properties of Ca1-xYbxZn2Sb2 (x=0, 0.25, 0.5, 0.75, 1) Zintl compounds

被引:13
作者
Mili, I [1 ,2 ]
Latelli, H. [1 ,2 ]
Ghellab, T. [1 ,2 ]
Charifi, Z. [1 ,2 ]
Baaziz, H. [1 ,2 ]
Soyalp, F. [3 ]
机构
[1] Univ Msila, Fac Sci, Dept Phys, Msila 28000, Algeria
[2] Univ Msila, Lab Phys & Chem Mat, Msila 28000, Algeria
[3] Yuzuncu Yil Univ, Fac Educ, Dept Math & Sci, Theoret Phys Res Lab, TR-65080 Tusba, Van, Turkey
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2021年 / 35卷 / 07期
关键词
Zintl compounds; electronic structure; thermoelectric materials; figure of merit; Seebeck coefficient; SOLIDS; YB; SUBSTITUTION; ENHANCEMENT; PHASES;
D O I
10.1142/S0217979221501009
中图分类号
O59 [应用物理学];
学科分类号
摘要
Based on the electronic structure, the physical properties of Ca1-xYbxZn2Sb2 (x = 0, 0.25, 0.5, 0.75, 1) Zintl compounds are studied. The transport properties can be significantly changed by varying the composition x. The materials under study are more metallic with increasing x and behaves like a semiconductor when x decreases. It is found that CaZn2Sb2 exhibits a larger thermopower magnitude (S = 241 mu V/K at T = 700 K) and the Seebeck coefficient decreases as x increases. The calculated figure of merit factor of YbZn2Sb2 is found to be low, this is explained by the fact that its structure is very compact and its bandgap is small which lead to high electrical and thermal conductivity due to high carrier concentration (n = 1:25.10(20) cm(-3) at T = 300 K). On other hand a narrow-gap (0:46 eV for CaZn2Sb2), provides a balance between a high Seebeck coefficient and low electronic thermal conductivity, with a slight increase in the carrier concentration when the temperature increases (3:87.10(19) cm(-3) at 600 K). As a consequence, CaZn2Sb2 compound is predicted to have good performance for thermoelectric applications. The electrical (sigma) and the thermal (K) conductivity for CaZn2Sb2 compound in both directions (along x and z-axes) are calculated. It is obtained that (sigma(xx)) is 120% of (sigma(zz)) at high-temperature, whereas S-zz Seebeck coefficient was higher than S-xx especially at T = 300 K (S-zz = 246 mu V/K; S-xx = 213 mu V/K). The large value of S-zz showed that the transport is dominated by zz-axis.
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页数:18
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共 55 条
  • [21] Kazem N, 2016, HBK PHYS CHEM RARE, V50, P177, DOI 10.1016/bs.hpcre.2016.05.003
  • [22] Characterization of Lorenz number with Seebeck coefficient measurement
    Kim, Hyun-Sik
    Gibbs, Zachary M.
    Tang, Yinglu
    Wang, Heng
    Snyder, G. Jeffrey
    [J]. APL MATERIALS, 2015, 3 (04):
  • [23] Merits and limits of the modified Becke-Johnson exchange potential
    Koller, David
    Tran, Fabien
    Blaha, Peter
    [J]. PHYSICAL REVIEW B, 2011, 83 (19)
  • [24] BoltzTraP. A code for calculating band-structure dependent quantities
    Madsen, Georg K. H.
    Singh, David J.
    [J]. COMPUTER PHYSICS COMMUNICATIONS, 2006, 175 (01) : 67 - 71
  • [25] The best thermoelectric
    Mahan, GD
    Sofo, JO
    [J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1996, 93 (15) : 7436 - 7439
  • [26] Properties of single crystalline AZn2Sb2 (A = Ca,Eu,Yb)
    May, Andrew F.
    McGuire, Michael A.
    Ma, Jie
    Delaire, Olivier
    Huq, Ashfia
    Custelcean, Radu
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 111 (03)
  • [27] Structure and Properties of Single Crystalline CaMg2Bi2, EuMg2Bi2, and YbMg2Bi2
    May, Andrew F.
    McGuire, Michael A.
    Singh, David J.
    Custelcean, Radu
    Jellison, Gerald E., Jr.
    [J]. INORGANIC CHEMISTRY, 2011, 50 (21) : 11127 - 11133
  • [28] Nag B.R, 1980, Electron Transport in Compound Semiconductors, P171
  • [29] Study of the structural, mechanical and thermodynamic properties of the new MAX phase compounds (Zr1-xTi x)3AlC2
    Ouadha, Ismail
    Rached, Habib
    Azzouz-Rached, Ahmed
    Reggad, Abderrahmane
    Rached, Djamel
    [J]. COMPUTATIONAL CONDENSED MATTER, 2020, 23
  • [30] High-temperature thermoelectric performance of heavily doped PbSe
    Parker, David
    Singh, David J.
    [J]. PHYSICAL REVIEW B, 2010, 82 (03):