Growth and characteristics of Fe-doped GaN

被引：79

作者：

Heikman, S ^{[1
]}

Keller, S

Mates, T

DenBaars, SP

Mishra, UK

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

doping; segregation; metalorganic vapor phase epitaxy; nitrides;

D O I：

10.1016/S0022-0248(02)01926-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The Fe doping of GaN by metalorganic chemical vapor deposition was studied. Si-Fe co-doping experiments revealed that the compensation activity of Fe was 34%. The Fe-doping response was investigated in detail by secondary ion mass spectroscopy. The observed slow Fe concentration turn-on and turn-off was found to be related to the sample surface, rather than to the reactor environment. Improved turn-off was demonstrated by etching a GaN:Fe surface in acids before the GaN regrowth. Fe segregation on the growth surface was proposed to explain the observed Fe-doping response. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：513 / 517

页数：5

共 13 条

[1]

BENYAACOV I, UNPUB ELECT DEVICE L

[2] Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers [J].

Cheong, MG ;

Kim, KS ;

Oh, CS ;

Namgung, NW ;

Yang, GM ;

Hong, CH ;

Lim, KY ;

Suh, EK ;

Nahm, KS ;

Lee, HJ ;

Lim, DH ;

Yoshikawa, A .

APPLIED PHYSICS LETTERS, 2000, 77 (16) :2557-2559

[3] STUDY OF THE DEEP ACCEPTOR LEVELS OF IRON IN INP [J].

FUNG, S ;

NICHOLAS, RJ ;

STRADLING, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (23) :5145-5155

[4] Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition [J].

Heikman, S ;

Keller, S ;

DenBaars, SP ;

Mishra, UK .

APPLIED PHYSICS LETTERS, 2002, 81 (03) :439-441

[5] Excited states of Fe3+ in GaN [J].

Heitz, R ;

Maxim, P ;

Eckey, L ;

Thurian, P ;

Hoffmann, A ;

Broser, I ;

Pressel, K ;

Meyer, BK .

PHYSICAL REVIEW B, 1997, 55 (07) :4382-4387

[6] TRENDS IN THE ELECTRONIC-PROPERTIES OF SUBSTITUTIONAL 3D TRANSITION-METAL IMPURITIES IN GAAS [J].

HEMSTREET, LA .

PHYSICAL REVIEW B, 1980, 22 (10) :4590-4599

[7] Effect of structural defects and chemical impurities on Hall mobilities in low pressure MOCVD grown GaN [J].

Hwang, CY ;

Schurman, MJ ;

Mayo, WE ;

Lu, YC ;

Stall, RA ;

Salagaj, T .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) :243-251

[8] THE CONTROL AND MODELING OF DOPING PROFILES AND TRANSIENTS IN MOVPE GROWTH [J].

KUECH, TF ;

WANG, PJ ;

TISCHLER, MA ;

POTEMSKI, R ;

SCILLA, GJ ;

CARDONE, F .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :624-630

[9] Degenerate layer at GaN/sapphire interface: Influence on hall-effect measurements [J].

Look, DC ;

Molnar, RJ .

APPLIED PHYSICS LETTERS, 1997, 70 (25) :3377-3379

[10] MECHANISM OF YELLOW LUMINESCENCE IN GAN [J].

OGINO, T ;

AOKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :2395-2405

← 1 2 →