Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

被引：4

作者：

Galadi, A. ^{[1
,2
,3
]}

Morancho, F. ^{[1
,2
]}

Hassani, M. M. ^{[3
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Toulouse, LAAS, ISAE, UPS,INSA,INP, F-31077 Toulouse, France

[3] Univ Cadi Ayyad, Dept Phys, Marrakech, Morocco

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 2010年 / 97卷 / 03期

关键词：

power semiconductor device; FLIMOSFET; breakdown voltage; on-resistance;

D O I：

10.1080/00207210903017206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents an analytical study of a new power metal-oxide semiconductor field-effect transistor (MOSFET) structure, called 'FLoating Islands MOSFET (FLIMOSFET)', which presents a better trade-off between breakdown voltage and on-resistance compared with conventional VDMOSFETs. The improvement of this trade-off was obtained by inserting one (or several) floating island(s) in the lowly doped epitaxial layer. An analytical model was developed, based on the physical structure of the FLIMOSFET, in order to show the positive effect of the P-floating island on the 'on-resistance/breakdown voltage' compromise.

引用

页码：241 / 247

页数：7

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